Wang, X., Wang, B., Zhang, Q., Sun, Y., Wang, E., Luo, H., . . . Liu, K. (2021). Grain-Boundary Engineering of Monolayer MoS2 for Energy-Efficient Lateral Synaptic Devices. Advanced materials (Deerfield Beach, Fla.), 33(32), . https://doi.org/10.1002/adma.202102435
Style de citation ChicagoWang, Xuewen, et al. "Grain-Boundary Engineering of Monolayer MoS2 for Energy-Efficient Lateral Synaptic Devices." Advanced Materials (Deerfield Beach, Fla.) 33, no. 32 (2021). https://dx.doi.org/10.1002/adma.202102435.
Style de citation MLAWang, Xuewen, et al. "Grain-Boundary Engineering of Monolayer MoS2 for Energy-Efficient Lateral Synaptic Devices." Advanced Materials (Deerfield Beach, Fla.), vol. 33, no. 32, 2021.
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