Face-to-Face Growth of Wafer-Scale 2D Semiconducting MOF Films on Dielectric Substrates

Face-to-Face Growth of Wafer-Scale 2D Semiconducting MOF Films on Dielectric Substrates

© 2021 Wiley-VCH GmbH.

Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Deerfield Beach, Fla.). - 1998. - 33(2021), 13 vom: 19. Apr., Seite e2007741
1. Verfasser: Liu, Youxing (VerfasserIn)
Weitere Verfasser: Wei, Yanan, Liu, Minghui, Bai, Yichao, Wang, Xinyu, Shang, Shengcong, Du, Changsheng, Gao, Wenqiang, Chen, Jianyi, Liu, Yunqi
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2021
Zugriff auf das übergeordnete Werk:Advanced materials (Deerfield Beach, Fla.)
Schlagworte:Journal Article 2D film capillary force face-to-face confinement growth metal-organic frameworks van der Waals heterojunction
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520 |a The preparation of large-area 2D conductive metal-organic framework (MOF) films remains highly desirable but challenging. Here, inspired by the capillary phenomenon, a face-to-face confinement growth method to grow conductive 2D Cu2 (TCPP) (TCPP = meso-tetra(4-carboxyphenyl)porphine) MOF films on dielectric substrates is developed. Trace amounts of solutions containing low-concentration Cu2+ and TCPP are pumped cyclically into a micropore interface to produce this growth. The crystal structures are confirmed with various characterization techniques, which include high-resolution atomic force microscopy and cryogenic transmission electron microscopy (Cryo-TEM). The Cu2 (TCPP) MOF film exhibit an electrical conductivity of ≈0.007 S cm-1 , which is approximately four orders of magnitude higher than other carboxylic-acid-based MOF materials (10-6 S cm-1 ). Other wafer-scale conductive MOF films such as M3 (HHTP)2 (M = Cu, Co, and Ni; HHTP = 2,3,6,7,10,11-triphenylenehexol) can be produced utilizing this strategy and suggests this method has widescale applicability potential 
650 4 |a Journal Article 
650 4 |a 2D film 
650 4 |a capillary force 
650 4 |a face-to-face confinement growth 
650 4 |a metal-organic frameworks 
650 4 |a van der Waals heterojunction 
700 1 |a Wei, Yanan  |e verfasserin  |4 aut 
700 1 |a Liu, Minghui  |e verfasserin  |4 aut 
700 1 |a Bai, Yichao  |e verfasserin  |4 aut 
700 1 |a Wang, Xinyu  |e verfasserin  |4 aut 
700 1 |a Shang, Shengcong  |e verfasserin  |4 aut 
700 1 |a Du, Changsheng  |e verfasserin  |4 aut 
700 1 |a Gao, Wenqiang  |e verfasserin  |4 aut 
700 1 |a Chen, Jianyi  |e verfasserin  |4 aut 
700 1 |a Liu, Yunqi  |e verfasserin  |4 aut 
773 0 8 |i Enthalten in  |t Advanced materials (Deerfield Beach, Fla.)  |d 1998  |g 33(2021), 13 vom: 19. Apr., Seite e2007741  |w (DE-627)NLM098206397  |x 1521-4095  |7 nnns 
773 1 8 |g volume:33  |g year:2021  |g number:13  |g day:19  |g month:04  |g pages:e2007741 
856 4 0 |u http://dx.doi.org/10.1002/adma.202007741  |3 Volltext 
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