Face-to-Face Growth of Wafer-Scale 2D Semiconducting MOF Films on Dielectric Substrates

Bibliographische Detailangaben
Veröffentlicht in:	Advanced materials (Deerfield Beach, Fla.). - 1998. - 33(2021), 13 vom: 19. Apr., Seite e2007741
1. Verfasser:	Liu, Youxing (VerfasserIn)
Weitere Verfasser:	Wei, Yanan, Liu, Minghui, Bai, Yichao, Wang, Xinyu, Shang, Shengcong, Du, Changsheng, Gao, Wenqiang, Chen, Jianyi, Liu, Yunqi
Format:	Online-Aufsatz
Sprache:	English
Veröffentlicht:	2021
Zugriff auf das übergeordnete Werk:	Advanced materials (Deerfield Beach, Fla.)
Schlagworte:	Journal Article 2D film capillary force face-to-face confinement growth metal-organic frameworks van der Waals heterojunction

Beschreibung
Zusammenfassung:	© 2021 Wiley-VCH GmbH. The preparation of large-area 2D conductive metal-organic framework (MOF) films remains highly desirable but challenging. Here, inspired by the capillary phenomenon, a face-to-face confinement growth method to grow conductive 2D Cu2 (TCPP) (TCPP = meso-tetra(4-carboxyphenyl)porphine) MOF films on dielectric substrates is developed. Trace amounts of solutions containing low-concentration Cu2+ and TCPP are pumped cyclically into a micropore interface to produce this growth. The crystal structures are confirmed with various characterization techniques, which include high-resolution atomic force microscopy and cryogenic transmission electron microscopy (Cryo-TEM). The Cu2 (TCPP) MOF film exhibit an electrical conductivity of ≈0.007 S cm-1 , which is approximately four orders of magnitude higher than other carboxylic-acid-based MOF materials (10-6 S cm-1 ). Other wafer-scale conductive MOF films such as M3 (HHTP)2 (M = Cu, Co, and Ni; HHTP = 2,3,6,7,10,11-triphenylenehexol) can be produced utilizing this strategy and suggests this method has widescale applicability potential
Beschreibung:	Date Revised 02.04.2021 published: Print-Electronic Citation Status PubMed-not-MEDLINE
ISSN:	1521-4095
DOI:	10.1002/adma.202007741