A Cost-Effective, Aqueous-Solution-Processed Cathode Interlayer Based on Organosilica Nanodots for Highly Efficient and Stable Organic Solar Cells

© 2020 The Authors. Published by Wiley-VCH GmbH.

Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Deerfield Beach, Fla.). - 1998. - 32(2020), 38 vom: 15. Sept., Seite e2002973
1. Verfasser: Cui, Mengqi (VerfasserIn)
Weitere Verfasser: Li, Dan, Du, Xiaoyan, Li, Na, Rong, Qikun, Li, Ning, Shui, Lingling, Zhou, Guofu, Wang, Xinghua, Brabec, Christoph J, Nian, Li
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2020
Zugriff auf das übergeordnete Werk:Advanced materials (Deerfield Beach, Fla.)
Schlagworte:Journal Article cathode interlayers device stability organic photovoltaics organosilica nanodots photostability
Beschreibung
Zusammenfassung:© 2020 The Authors. Published by Wiley-VCH GmbH.
The performance and industrial viability of organic photovoltaics are strongly influenced by the functionality and stability of interface layers. Many of the interface materials most commonly used in the lab are limited in their operational stability or their materials cost and are frequently not transferred toward large-scale production and industrial applications. In this work, an advanced aqueous-solution-processed cathode interface layer is demonstrated based on cost-effective organosilica nanodots (OSiNDs) synthesized via a simple one-step hydrothermal reaction. Compared to the interface layers optimized for inverted organic solar cells (i-OSCs), the OSiNDs cathode interlayer shows improved charge carrier extraction and excellent operational stability for various model photoactive systems, achieving a remarkably high power conversion efficiency up to 17.15%. More importantly, the OSiNDs' interlayer is extremely stable under thermal stress or photoillumination (UV and AM 1.5G) and undergoes no photochemical reaction with the photoactive materials used. As a result, the operational stability of inverted OSCs under continuous 1 sun illumination (AM 1.5G, 100 mW cm-2 ) is significantly improved by replacing the commonly used ZnO interlayer with OSiND-based interfaces
Beschreibung:Date Revised 22.02.2021
published: Print-Electronic
Citation Status PubMed-not-MEDLINE
ISSN:1521-4095
DOI:10.1002/adma.202002973