Observation of Quantum Anomalous Hall Effect and Exchange Interaction in Topological Insulator/Antiferromagnet Heterostructure

Observation of Quantum Anomalous Hall Effect and Exchange Interaction in Topological Insulator/Antiferromagnet Heterostructure

© 2020 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Détails bibliographiques
Publié dans:Advanced materials (Deerfield Beach, Fla.). - 1998. - 32(2020), 34 vom: 30. Aug., Seite e2001460
Auteur principal: Pan, Lei (Auteur)
Autres auteurs: Grutter, Alexander, Zhang, Peng, Che, Xiaoyu, Nozaki, Tomohiro, Stern, Alex, Street, Mike, Zhang, Bing, Casas, Brian, He, Qing Lin, Choi, Eun Sang, Disseler, Steven M, Gilbert, Dustin A, Yin, Gen, Shao, Qiming, Deng, Peng, Wu, Yingying, Liu, Xiaoyang, Kou, Xufeng, Masashi, Sahashi, Han, Xiaodong, Binek, Christian, Chambers, Scott, Xia, Jing, Wang, Kang L
Format: Article en ligne
Langue:English
Publié: 2020
Accès à la collection:Advanced materials (Deerfield Beach, Fla.)
Sujets:Journal Article antiferromagnet quantum anomalous Hall effect topological insulators
Description
Résumé:© 2020 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Integration of a quantum anomalous Hall insulator with a magnetically ordered material provides an additional degree of freedom through which the resulting exotic quantum states can be controlled. Here, an experimental observation is reported of the quantum anomalous Hall effect in a magnetically-doped topological insulator grown on the antiferromagnetic insulator Cr2 O3 . The exchange coupling between the two materials is investigated using field-cooling-dependent magnetometry and polarized neutron reflectometry. Both techniques reveal strong interfacial interaction between the antiferromagnetic order of the Cr2 O3 and the magnetic topological insulator, manifested as an exchange bias when the sample is field-cooled under an out-of-plane magnetic field, and an exchange spring-like magnetic depth profile when the system is magnetized within the film plane. These results identify antiferromagnetic insulators as suitable candidates for the manipulation of magnetic and topological order in topological insulator films
Description:Date Revised 30.09.2020
published: Print-Electronic
Citation Status PubMed-not-MEDLINE
ISSN:1521-4095
DOI:10.1002/adma.202001460