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231225s2019 xx |||||o 00| ||eng c |
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|a 10.1002/adma.201805389
|2 doi
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|a pubmed25n0970.xml
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|a (DE-627)NLM29120631X
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|a (NLM)30489665
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|a DE-627
|b ger
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|e rakwb
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|a eng
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|a Sohn, Changhee
|e verfasserin
|4 aut
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|a Room-Temperature Ferromagnetic Insulating State in Cation-Ordered Double-Perovskite Sr2 Fe1+ x Re1- x O6 Films
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|c 2019
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
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|2 rdamedia
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|a ƒa Online-Ressource
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|2 rdacarrier
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|a Date Completed 30.01.2019
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|a Date Revised 30.09.2020
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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|a Ferromagnetic insulators (FMIs) are one of the most important components in developing dissipationless electronic and spintronic devices. However, FMIs are innately rare to find in nature as ferromagnetism generally accompanies metallicity. Here, novel room-temperature FMI films that are epitaxially synthesized by deliberate control of the ratio between two B-site cations in the double perovskite Sr2 Fe1+ x Re1- x O6 (-0.2 ≤ x ≤ 0.2) are reported. In contrast to the known FM metallic phase in stoichiometric Sr2 FeReO6 , an FMI state with a high Curie temperature (Tc ≈ 400 K) and a large saturation magnetization (MS ≈ 1.8 µB f.u.-1 ) is found in highly cation-ordered Fe-rich phases. The stabilization of the FMI state is attributed to the formation of extra Fe3+ Fe3+ and Fe3+ Re6+ bonding states, which originate from the relatively excess Fe ions owing to the deficiency in Re ions. The emerging FMI state created by controlling cations in the oxide double perovskites opens the door to developing novel oxide quantum materials and spintronic devices
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|a Journal Article
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|a Sr2FeReO6
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|a epitaxy
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|a ferromagnetic insulators
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|a oxide perovskites
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|a spectroscopy
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|a Skoropata, Elizabeth
|e verfasserin
|4 aut
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|a Choi, Yongseong
|e verfasserin
|4 aut
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|a Gao, Xiang
|e verfasserin
|4 aut
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|a Rastogi, Ankur
|e verfasserin
|4 aut
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1 |
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|a Huon, Amanda
|e verfasserin
|4 aut
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1 |
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|a McGuire, Michael A
|e verfasserin
|4 aut
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|a Nuckols, Lauren
|e verfasserin
|4 aut
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|a Zhang, Yanwen
|e verfasserin
|4 aut
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|a Freeland, John W
|e verfasserin
|4 aut
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|a Haskel, Daniel
|e verfasserin
|4 aut
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| 700 |
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|a Lee, Ho Nyung
|e verfasserin
|4 aut
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| 773 |
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 31(2019), 4 vom: 28. Jan., Seite e1805389
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
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| 773 |
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|g volume:31
|g year:2019
|g number:4
|g day:28
|g month:01
|g pages:e1805389
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|u http://dx.doi.org/10.1002/adma.201805389
|3 Volltext
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|d 31
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|c 01
|h e1805389
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