Liu, X., Liang, R., Gao, G., Pan, C., Jiang, C., Xu, Q., . . . Wang, Z. L. (2018). MoS2 Negative-Capacitance Field-Effect Transistors with Subthreshold Swing below the Physics Limit. Advanced materials (Deerfield Beach, Fla.), 30(28), . https://doi.org/10.1002/adma.201800932
Chicago ZitierstilLiu, Xingqiang, et al. "MoS2 Negative-Capacitance Field-Effect Transistors with Subthreshold Swing Below the Physics Limit." Advanced Materials (Deerfield Beach, Fla.) 30, no. 28 (2018). https://dx.doi.org/10.1002/adma.201800932.
MLA ZitierstilLiu, Xingqiang, et al. "MoS2 Negative-Capacitance Field-Effect Transistors with Subthreshold Swing Below the Physics Limit." Advanced Materials (Deerfield Beach, Fla.), vol. 30, no. 28, 2018.
Achtung: Diese Zitate sind unter Umständen nicht zu 100% korrekt.