APA Zitierstil

Wan, Y., Xiao, J., Li, J., Fang, X., Zhang, K., Fu, L., . . . Dai, L. (2018). Epitaxial Single-Layer MoS2 on GaN with Enhanced Valley Helicity. Advanced materials (Deerfield Beach, Fla.), 30(5), . https://doi.org/10.1002/adma.201703888

Chicago Zitierstil

Wan, Yi, et al. "Epitaxial Single-Layer MoS2 on GaN with Enhanced Valley Helicity." Advanced Materials (Deerfield Beach, Fla.) 30, no. 5 (2018). https://dx.doi.org/10.1002/adma.201703888.

MLA Zitierstil

Wan, Yi, et al. "Epitaxial Single-Layer MoS2 on GaN with Enhanced Valley Helicity." Advanced Materials (Deerfield Beach, Fla.), vol. 30, no. 5, 2018.

Achtung: Diese Zitate sind unter Umständen nicht zu 100% korrekt.