Local structure around In atoms in coherently grown m-plane InGaN film
The local structure around In atoms in an m-plane In0.06Ga0.94N film coherently grown on a freestanding m-plane GaN substrate was investigated by polarization-dependent X-ray absorption fine-structure. A step-by-step fitting procedure was proposed for the m-plane wurtzite structure. The interatomic...
| Publié dans: | Journal of synchrotron radiation. - 1994. - 24(2017), Pt 5 vom: 01. Sept., Seite 1012-1016 |
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| Auteur principal: | |
| Autres auteurs: | , , |
| Format: | Article en ligne |
| Langue: | English |
| Publié: |
2017
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| Accès à la collection: | Journal of synchrotron radiation |
| Sujets: | Journal Article InGaN XAFS local structure m-plane step-by-step fitting procedure |
| Résumé: | The local structure around In atoms in an m-plane In0.06Ga0.94N film coherently grown on a freestanding m-plane GaN substrate was investigated by polarization-dependent X-ray absorption fine-structure. A step-by-step fitting procedure was proposed for the m-plane wurtzite structure. The interatomic distance for the first nearest neighbour In-N atomic pairs was almost isotropic. For the second nearest In-Ga pairs, the interatomic distances along the m- and a-axes were longer and shorter, respectively, than that in strain-free virtual crystals as expected for the m-plane compressive strain. In contrast, the In-Ga interatomic distance in the c-direction was elongated in spite of the compressive strain, which was explained in terms of the anisotropic atomic structure on the m-plane. The local strain in the m-plane film was more relaxed than that in coherently grown c-plane single quantum wells. A few In atoms were atomically localized in all directions, and thus localized excitonic emission is expected as in the case of c-plane InGaN |
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| Description: | Date Revised 20.11.2019 published: Print-Electronic Citation Status PubMed-not-MEDLINE |
| ISSN: | 1600-5775 |
| DOI: | 10.1107/S1600577517010669 |