Tan, W. C., Cai, Y., Ng, R. J., Huang, L., Feng, X., Zhang, G., . . . Ang, K. (2017). Few-Layer Black Phosphorus Carbide Field-Effect Transistor via Carbon Doping. Advanced materials (Deerfield Beach, Fla.), 29(24), . https://doi.org/10.1002/adma.201700503
Chicago ZitierstilTan, Wee Chong, et al. "Few-Layer Black Phosphorus Carbide Field-Effect Transistor via Carbon Doping." Advanced Materials (Deerfield Beach, Fla.) 29, no. 24 (2017). https://dx.doi.org/10.1002/adma.201700503.
MLA ZitierstilTan, Wee Chong, et al. "Few-Layer Black Phosphorus Carbide Field-Effect Transistor via Carbon Doping." Advanced Materials (Deerfield Beach, Fla.), vol. 29, no. 24, 2017.
Achtung: Diese Zitate sind unter Umständen nicht zu 100% korrekt.