Efficient Low-Temperature Solution-Processed Lead-Free Perovskite Infrared Light-Emitting Diodes

© 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Deerfield Beach, Fla.). - 1998. - 28(2016), 36 vom: 28. Sept., Seite 8029-8036
1. Verfasser: Hong, Wei-Li (VerfasserIn)
Weitere Verfasser: Huang, Yu-Chi, Chang, Che-Yu, Zhang, Zhi-Chao, Tsai, Huai-Ren, Chang, Ning-Yi, Chao, Yu-Chiang
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2016
Zugriff auf das übergeordnete Werk:Advanced materials (Deerfield Beach, Fla.)
Schlagworte:Journal Article electroluminescence infrared lead-free light-emitting diodes perovskites
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520 |a Lead-free perovskite infrared light-emitting diodes are achieved by using a halide perovskite CsSnI3 as an emissive layer. The film shows compact micrometer-sized grains with only a few pinholes and cracks at the grain boundaries. The device exhibits maximum radiance of 40 W sr-1 m-2 at a current density of 364.3 mA cm-2 and maximum external quantum efficiency of 3.8% at 4.5 V 
650 4 |a Journal Article 
650 4 |a electroluminescence 
650 4 |a infrared 
650 4 |a lead-free 
650 4 |a light-emitting diodes 
650 4 |a perovskites 
700 1 |a Huang, Yu-Chi  |e verfasserin  |4 aut 
700 1 |a Chang, Che-Yu  |e verfasserin  |4 aut 
700 1 |a Zhang, Zhi-Chao  |e verfasserin  |4 aut 
700 1 |a Tsai, Huai-Ren  |e verfasserin  |4 aut 
700 1 |a Chang, Ning-Yi  |e verfasserin  |4 aut 
700 1 |a Chao, Yu-Chiang  |e verfasserin  |4 aut 
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