Liu, X., Qu, D., Ryu, J., Ahmed, F., Yang, Z., Lee, D., & Yoo, W. J. (2016). P-Type Polar Transition of Chemically Doped Multilayer MoS2 Transistor. Advanced materials (Deerfield Beach, Fla.), 28(12), 2345. https://doi.org/10.1002/adma.201505154
Chicago ZitierstilLiu, Xiaochi, Deshun Qu, Jungjin Ryu, Faisal Ahmed, Zheng Yang, Daeyeong Lee, und Won Jong Yoo. "P-Type Polar Transition of Chemically Doped Multilayer MoS2 Transistor." Advanced Materials (Deerfield Beach, Fla.) 28, no. 12 (2016): 2345. https://dx.doi.org/10.1002/adma.201505154.
MLA ZitierstilLiu, Xiaochi, et al. "P-Type Polar Transition of Chemically Doped Multilayer MoS2 Transistor." Advanced Materials (Deerfield Beach, Fla.), vol. 28, no. 12, 2016, p. 2345.
Achtung: Diese Zitate sind unter Umständen nicht zu 100% korrekt.