H₂O Dissociation-Induced Aluminum Oxide Growth on Oxidized Al(111) Surfaces
The interaction of water vapor with amorphous aluminum oxide films on Al(111) is studied using X-ray photoelectron spectroscopy to elucidate the passivation mechanism of the oxidized Al(111) surfaces. Exposure of the aluminum oxide film to water vapor results in self-limiting Al2O3/Al(OH)3 bilayer f...
Publié dans: | Langmuir : the ACS journal of surfaces and colloids. - 1985. - 31(2015), 48 vom: 08. Dez., Seite 13117-26 |
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Auteur principal: | |
Autres auteurs: | , |
Format: | Article en ligne |
Langue: | English |
Publié: |
2015
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Accès à la collection: | Langmuir : the ACS journal of surfaces and colloids |
Sujets: | Journal Article Research Support, U.S. Gov't, Non-P.H.S. Water 059QF0KO0R Aluminum Oxide LMI26O6933 |
Résumé: | The interaction of water vapor with amorphous aluminum oxide films on Al(111) is studied using X-ray photoelectron spectroscopy to elucidate the passivation mechanism of the oxidized Al(111) surfaces. Exposure of the aluminum oxide film to water vapor results in self-limiting Al2O3/Al(OH)3 bilayer film growth via counter-diffusion of both ions, Al outward and OH inward, where a thinner starting aluminum oxide film is more reactive toward H2O dissociation-induced oxide growth because of the thickness-dependent ionic transport in the aluminum oxide film. The aluminum oxide film exhibits reactivity toward H2O dissociation in both low-vapor pressure [p(H2O) = 1 × 10(-6) Torr] and intermediate-vapor pressure [p(H2O) = 5 Torr] regimes. Compared to the oxide film growth by exposure to a p(H2O) of 1 × 10(-6) Torr, the exposure to a p(H2O) of 5 Torr results in the formation of a more open structure of the inner Al(OH)3 layer and a more compact outer Al2O3 layer, demonstrating the vapor-pressure-dependent atomic structure in the passivating layer |
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Description: | Date Completed 16.09.2016 Date Revised 08.12.2015 published: Print-Electronic Citation Status MEDLINE |
ISSN: | 1520-5827 |
DOI: | 10.1021/acs.langmuir.5b02769 |