Benediktovitch, A., Zhylik, A., Ulyanenkova, T., Myronov, M., & Ulyanenkov, A. (2015). Characterization of dislocations in germanium layers grown on (011)- and (111)-oriented silicon by coplanar and noncoplanar X-ray diffraction. Journal of applied crystallography, 48(Pt 3), 655.
Style de citation ChicagoBenediktovitch, Andrei, Alexei Zhylik, Tatjana Ulyanenkova, Maksym Myronov, et Alex Ulyanenkov. "Characterization of Dislocations in Germanium Layers Grown on (011)- and (111)-oriented Silicon by Coplanar and Noncoplanar X-ray Diffraction." Journal of Applied Crystallography 48, no. Pt 3 (2015): 655.
Style de citation MLABenediktovitch, Andrei, et al. "Characterization of Dislocations in Germanium Layers Grown on (011)- and (111)-oriented Silicon by Coplanar and Noncoplanar X-ray Diffraction." Journal of Applied Crystallography, vol. 48, no. Pt 3, 2015, p. 655.