Li, X., Yang, L., Si, M., Li, S., Huang, M., Ye, P., & Wu, Y. (2015). Performance potential and limit of MoS2 transistors. Advanced materials (Deerfield Beach, Fla.), 27(9), 1547. https://doi.org/10.1002/adma.201405068
Style de citation ChicagoLi, Xuefei, Lingming Yang, Mengwei Si, Sichao Li, Mingqiang Huang, Peide Ye, et Yanqing Wu. "Performance Potential and Limit of MoS2 Transistors." Advanced Materials (Deerfield Beach, Fla.) 27, no. 9 (2015): 1547. https://dx.doi.org/10.1002/adma.201405068.
Style de citation MLALi, Xuefei, et al. "Performance Potential and Limit of MoS2 Transistors." Advanced Materials (Deerfield Beach, Fla.), vol. 27, no. 9, 2015, p. 1547.
Attention : ces citations peuvent ne pas être correctes à 100%.