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231224s2015 xx |||||o 00| ||eng c |
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7 |
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|a 10.1002/adma.201404625
|2 doi
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|a eng
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| 100 |
1 |
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|a Park, Young-Su
|e verfasserin
|4 aut
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| 245 |
1 |
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|a Design of an efficient charge-trapping layer with a built-in tunnel barrier for reliable organic-transistor memory
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|c 2015
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
|b c
|2 rdamedia
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|a ƒa Online-Ressource
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|a Date Completed 21.05.2015
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|a Date Revised 09.03.2022
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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|a A fully feasible and versatile way to fabricate highly reliable organic-transistor memory devices is made possible by a novel design of the charge-trappling layer. Goldsilica (core-shell)-structured nanoparticles are synthesized and used as the charge-trapping layer. Superior electrical reliability is obtained because the silica shell acts as a built-in tunnel potential barrier
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|a Journal Article
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|a core-shell nanoparticles
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|a memory devices
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|a organic electronics
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| 650 |
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|a organic-transistor memory
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| 700 |
1 |
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|a Lee, Jang-Sik
|e verfasserin
|4 aut
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| 773 |
0 |
8 |
|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 27(2015), 4 vom: 27. Jan., Seite 706-11
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
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| 773 |
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|g volume:27
|g year:2015
|g number:4
|g day:27
|g month:01
|g pages:706-11
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|u http://dx.doi.org/10.1002/adma.201404625
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