Spintronic functionality of BiFeO3 domain walls

© 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Deerfield Beach, Fla.). - 1998. - 26(2014), 41 vom: 05. Nov., Seite 7078-82
1. Verfasser: Lee, Ji Hye (VerfasserIn)
Weitere Verfasser: Fina, Ignasi, Marti, Xavi, Kim, Young Heon, Hesse, Dietrich, Alexe, Marin
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2014
Zugriff auf das übergeordnete Werk:Advanced materials (Deerfield Beach, Fla.)
Schlagworte:Journal Article BiFeO3 anisotropic magnetoresistance conduction mechanism domain walls spintronics
LEADER 01000naa a22002652 4500
001 NLM242188230
003 DE-627
005 20231224125851.0
007 cr uuu---uuuuu
008 231224s2014 xx |||||o 00| ||eng c
024 7 |a 10.1002/adma.201402558  |2 doi 
028 5 2 |a pubmed24n0807.xml 
035 |a (DE-627)NLM242188230 
035 |a (NLM)25252245 
040 |a DE-627  |b ger  |c DE-627  |e rakwb 
041 |a eng 
100 1 |a Lee, Ji Hye  |e verfasserin  |4 aut 
245 1 0 |a Spintronic functionality of BiFeO3 domain walls 
264 1 |c 2014 
336 |a Text  |b txt  |2 rdacontent 
337 |a ƒaComputermedien  |b c  |2 rdamedia 
338 |a ƒa Online-Ressource  |b cr  |2 rdacarrier 
500 |a Date Completed 21.05.2015 
500 |a Date Revised 30.09.2020 
500 |a published: Print-Electronic 
500 |a Citation Status PubMed-not-MEDLINE 
520 |a © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. 
520 |a Anisotropic magnetoresistance at the BiFeO3 domain walls has been observed thanks to the realization of micro-devices that allow the direct magneto-transport characterization of the domain-walls. Anisotropic magnetoresistance of ferromagnetic metals has been a pillar in spintronic technology, and now it is evidenced at the conductive domain walls of an insulating ferroelectric material, which implies that domain walls become an electrically tunable nanospintronic object 
650 4 |a Journal Article 
650 4 |a BiFeO3 
650 4 |a anisotropic magnetoresistance 
650 4 |a conduction mechanism 
650 4 |a domain walls 
650 4 |a spintronics 
700 1 |a Fina, Ignasi  |e verfasserin  |4 aut 
700 1 |a Marti, Xavi  |e verfasserin  |4 aut 
700 1 |a Kim, Young Heon  |e verfasserin  |4 aut 
700 1 |a Hesse, Dietrich  |e verfasserin  |4 aut 
700 1 |a Alexe, Marin  |e verfasserin  |4 aut 
773 0 8 |i Enthalten in  |t Advanced materials (Deerfield Beach, Fla.)  |d 1998  |g 26(2014), 41 vom: 05. Nov., Seite 7078-82  |w (DE-627)NLM098206397  |x 1521-4095  |7 nnns 
773 1 8 |g volume:26  |g year:2014  |g number:41  |g day:05  |g month:11  |g pages:7078-82 
856 4 0 |u http://dx.doi.org/10.1002/adma.201402558  |3 Volltext 
912 |a GBV_USEFLAG_A 
912 |a SYSFLAG_A 
912 |a GBV_NLM 
912 |a GBV_ILN_350 
951 |a AR 
952 |d 26  |j 2014  |e 41  |b 05  |c 11  |h 7078-82