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231224s2014 xx |||||o 00| ||eng c |
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|a 10.1002/adma.201402558
|2 doi
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|a pubmed24n0807.xml
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|a (DE-627)NLM242188230
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|a (NLM)25252245
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|a DE-627
|b ger
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|e rakwb
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|a eng
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|a Lee, Ji Hye
|e verfasserin
|4 aut
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|a Spintronic functionality of BiFeO3 domain walls
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|c 2014
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
|b c
|2 rdamedia
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|a ƒa Online-Ressource
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|2 rdacarrier
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|a Date Completed 21.05.2015
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|a Date Revised 30.09.2020
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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|a Anisotropic magnetoresistance at the BiFeO3 domain walls has been observed thanks to the realization of micro-devices that allow the direct magneto-transport characterization of the domain-walls. Anisotropic magnetoresistance of ferromagnetic metals has been a pillar in spintronic technology, and now it is evidenced at the conductive domain walls of an insulating ferroelectric material, which implies that domain walls become an electrically tunable nanospintronic object
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|a Journal Article
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|a BiFeO3
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|a anisotropic magnetoresistance
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|a conduction mechanism
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|a domain walls
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|a spintronics
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|a Fina, Ignasi
|e verfasserin
|4 aut
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|a Marti, Xavi
|e verfasserin
|4 aut
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|a Kim, Young Heon
|e verfasserin
|4 aut
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|a Hesse, Dietrich
|e verfasserin
|4 aut
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|a Alexe, Marin
|e verfasserin
|4 aut
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 26(2014), 41 vom: 05. Nov., Seite 7078-82
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
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|g volume:26
|g year:2014
|g number:41
|g day:05
|g month:11
|g pages:7078-82
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|u http://dx.doi.org/10.1002/adma.201402558
|3 Volltext
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