Spintronic functionality of BiFeO3 domain walls

Spintronic functionality of BiFeO3 domain walls

© 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Deerfield Beach, Fla.). - 1998. - 26(2014), 41 vom: 05. Nov., Seite 7078-82
1. Verfasser: Lee, Ji Hye (VerfasserIn)
Weitere Verfasser: Fina, Ignasi, Marti, Xavi, Kim, Young Heon, Hesse, Dietrich, Alexe, Marin
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2014
Zugriff auf das übergeordnete Werk:Advanced materials (Deerfield Beach, Fla.)
Schlagworte:Journal Article BiFeO3 anisotropic magnetoresistance conduction mechanism domain walls spintronics
Beschreibung
Zusammenfassung:© 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Anisotropic magnetoresistance at the BiFeO3 domain walls has been observed thanks to the realization of micro-devices that allow the direct magneto-transport characterization of the domain-walls. Anisotropic magnetoresistance of ferromagnetic metals has been a pillar in spintronic technology, and now it is evidenced at the conductive domain walls of an insulating ferroelectric material, which implies that domain walls become an electrically tunable nanospintronic object
Beschreibung:Date Completed 21.05.2015
Date Revised 30.09.2020
published: Print-Electronic
Citation Status PubMed-not-MEDLINE
ISSN:1521-4095
DOI:10.1002/adma.201402558