Thermal functionalization of GaN surfaces with 1-alkenes

A thermally induced functionalization process for gallium nitride surfaces with 1-alkenes is introduced. The resulting functionalization layers are characterized with atomic force microscopy and X-ray photoelectron spectroscopy and compared to reference samples without and with a photochemically gen...

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Détails bibliographiques
Publié dans:Langmuir : the ACS journal of surfaces and colloids. - 1985. - 29(2013), 21 vom: 28. Mai, Seite 6296-301
Auteur principal: Schwarz, Stefan U (Auteur)
Autres auteurs: Cimalla, Volker, Eichapfel, Georg, Himmerlich, Marcel, Krischok, Stefan, Ambacher, Oliver
Format: Article en ligne
Langue:English
Publié: 2013
Accès à la collection:Langmuir : the ACS journal of surfaces and colloids
Sujets:Journal Article Research Support, Non-U.S. Gov't Alkenes gallium nitride 1R9CC3P9VL Gallium CH46OC8YV4