Yoon, J. H., Han, J. H., Jung, J. S., Jeon, W., Kim, G. H., Song, S. J., . . . Hwang, C. S. (2013). Highly improved uniformity in the resistive switching parameters of TiO2 thin films by inserting Ru nanodots. Advanced materials (Deerfield Beach, Fla.), 25(14), 1987. https://doi.org/10.1002/adma.201204572
Style de citation ChicagoYoon, Jung Ho, et al. "Highly Improved Uniformity in the Resistive Switching Parameters of TiO2 Thin Films by Inserting Ru Nanodots." Advanced Materials (Deerfield Beach, Fla.) 25, no. 14 (2013): 1987. https://dx.doi.org/10.1002/adma.201204572.
Style de citation MLAYoon, Jung Ho, et al. "Highly Improved Uniformity in the Resistive Switching Parameters of TiO2 Thin Films by Inserting Ru Nanodots." Advanced Materials (Deerfield Beach, Fla.), vol. 25, no. 14, 2013, p. 1987.