Pattanasattayavong, P., Yaacobi-Gross, N., Zhao, K., Ndjawa, G. O. N., Li, J., Yan, F., . . . Anthopoulos, T. D. (2013). Hole-transporting transistors and circuits based on the transparent inorganic semiconductor copper(I) thiocyanate (CuSCN) processed from solution at room temperature. Advanced materials (Deerfield Beach, Fla.), 25(10), 1504. https://doi.org/10.1002/adma.201202758
Chicago ZitierstilPattanasattayavong, Pichaya, Nir Yaacobi-Gross, Kui Zhao, Guy Olivier Ngongang Ndjawa, Jinhua Li, Feng Yan, Brian C. O'Regan, Aram Amassian, und Thomas D. Anthopoulos. "Hole-transporting Transistors and Circuits Based on the Transparent Inorganic Semiconductor Copper(I) Thiocyanate (CuSCN) Processed from Solution at Room Temperature." Advanced Materials (Deerfield Beach, Fla.) 25, no. 10 (2013): 1504. https://dx.doi.org/10.1002/adma.201202758.
MLA ZitierstilPattanasattayavong, Pichaya, et al. "Hole-transporting Transistors and Circuits Based on the Transparent Inorganic Semiconductor Copper(I) Thiocyanate (CuSCN) Processed from Solution at Room Temperature." Advanced Materials (Deerfield Beach, Fla.), vol. 25, no. 10, 2013, p. 1504.