APA Zitierstil

Pattanasattayavong, P., Yaacobi-Gross, N., Zhao, K., Ndjawa, G. O. N., Li, J., Yan, F., . . . Anthopoulos, T. D. (2013). Hole-transporting transistors and circuits based on the transparent inorganic semiconductor copper(I) thiocyanate (CuSCN) processed from solution at room temperature. Advanced materials (Deerfield Beach, Fla.), 25(10), 1504. https://doi.org/10.1002/adma.201202758

Chicago Zitierstil

Pattanasattayavong, Pichaya, Nir Yaacobi-Gross, Kui Zhao, Guy Olivier Ngongang Ndjawa, Jinhua Li, Feng Yan, Brian C. O'Regan, Aram Amassian, und Thomas D. Anthopoulos. "Hole-transporting Transistors and Circuits Based on the Transparent Inorganic Semiconductor Copper(I) Thiocyanate (CuSCN) Processed from Solution at Room Temperature." Advanced Materials (Deerfield Beach, Fla.) 25, no. 10 (2013): 1504. https://dx.doi.org/10.1002/adma.201202758.

MLA Zitierstil

Pattanasattayavong, Pichaya, et al. "Hole-transporting Transistors and Circuits Based on the Transparent Inorganic Semiconductor Copper(I) Thiocyanate (CuSCN) Processed from Solution at Room Temperature." Advanced Materials (Deerfield Beach, Fla.), vol. 25, no. 10, 2013, p. 1504.

Achtung: Diese Zitate sind unter Umständen nicht zu 100% korrekt.