Nonvolatile memory devices prepared from sol-gel derived niobium pentoxide films

We report on the resistive switching nonvolatile memory (RSNM) properties of niobium pentoxide (Nb(2)O(5)) films prepared using sol-gel chemistry. A sol-gel derived solution of niobium ethoxide, a precursor to Nb(2)O(5), was spin-coated on to a platinum (Pt)-coated silicon substrate, and was then an...

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Veröffentlicht in:Langmuir : the ACS journal of surfaces and colloids. - 1992. - 29(2013), 1 vom: 08. Jan., Seite 380-6
1. Verfasser: Baek, Hyunhee (VerfasserIn)
Weitere Verfasser: Lee, Chanwoo, Choi, Jungkyu, Cho, Jinhan
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2013
Zugriff auf das übergeordnete Werk:Langmuir : the ACS journal of surfaces and colloids
Schlagworte:Journal Article
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520 |a We report on the resistive switching nonvolatile memory (RSNM) properties of niobium pentoxide (Nb(2)O(5)) films prepared using sol-gel chemistry. A sol-gel derived solution of niobium ethoxide, a precursor to Nb(2)O(5), was spin-coated on to a platinum (Pt)-coated silicon substrate, and was then annealed at approximately 620 and 450 °C to form a Nb(2)O(5) film of polycrystalline and amorphous structure, respectively. A top electrode consisting of Ag, W, Au, or Pt was then coated onto the Nb(2)O(5) films to complete the fabrication. After a forming process of limited current compliance up to 10 mA, known as "electroforming", a resistive switching phenomenon, independent of voltage polarity (unipolar switching), was observed at low operating voltages (0.59 ± 0.05 V(RESET) and 1.03 ± 0.06 V(SET)) with a high ON/OFF current ratio above 10(8). The reported approach offers opportunities for preparing Nb(2)O(5)-based resistive switching memory devices from solution process 
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700 1 |a Lee, Chanwoo  |e verfasserin  |4 aut 
700 1 |a Choi, Jungkyu  |e verfasserin  |4 aut 
700 1 |a Cho, Jinhan  |e verfasserin  |4 aut 
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