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231224s2013 xx |||||o 00| ||eng c |
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|a 10.1021/la303857b
|2 doi
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|a pubmed24n0744.xml
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|a DE-627
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|a eng
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|a Baek, Hyunhee
|e verfasserin
|4 aut
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|a Nonvolatile memory devices prepared from sol-gel derived niobium pentoxide films
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|c 2013
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
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|2 rdamedia
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|a ƒa Online-Ressource
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|2 rdacarrier
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|a Date Completed 14.06.2013
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|a Date Revised 08.01.2013
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a We report on the resistive switching nonvolatile memory (RSNM) properties of niobium pentoxide (Nb(2)O(5)) films prepared using sol-gel chemistry. A sol-gel derived solution of niobium ethoxide, a precursor to Nb(2)O(5), was spin-coated on to a platinum (Pt)-coated silicon substrate, and was then annealed at approximately 620 and 450 °C to form a Nb(2)O(5) film of polycrystalline and amorphous structure, respectively. A top electrode consisting of Ag, W, Au, or Pt was then coated onto the Nb(2)O(5) films to complete the fabrication. After a forming process of limited current compliance up to 10 mA, known as "electroforming", a resistive switching phenomenon, independent of voltage polarity (unipolar switching), was observed at low operating voltages (0.59 ± 0.05 V(RESET) and 1.03 ± 0.06 V(SET)) with a high ON/OFF current ratio above 10(8). The reported approach offers opportunities for preparing Nb(2)O(5)-based resistive switching memory devices from solution process
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|a Journal Article
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|a Lee, Chanwoo
|e verfasserin
|4 aut
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|a Choi, Jungkyu
|e verfasserin
|4 aut
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|a Cho, Jinhan
|e verfasserin
|4 aut
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|i Enthalten in
|t Langmuir : the ACS journal of surfaces and colloids
|d 1992
|g 29(2013), 1 vom: 08. Jan., Seite 380-6
|w (DE-627)NLM098181009
|x 1520-5827
|7 nnns
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|g volume:29
|g year:2013
|g number:1
|g day:08
|g month:01
|g pages:380-6
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|u http://dx.doi.org/10.1021/la303857b
|3 Volltext
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