Highly air-stable phosphorus-doped n-type graphene field-effect transistors

Highly air-stable phosphorus-doped n-type graphene field-effect transistors

Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Détails bibliographiques
Publié dans:Advanced materials (Deerfield Beach, Fla.). - 1998. - 24(2012), 40 vom: 23. Okt., Seite 5481-6
Auteur principal: Some, Surajit (Auteur)
Autres auteurs: Kim, Jangah, Lee, Keunsik, Kulkarni, Atul, Yoon, Yeoheung, Lee, Saemi, Kim, Taesung, Lee, Hyoyoung
Format: Article en ligne
Langue:English
Publié: 2012
Accès à la collection:Advanced materials (Deerfield Beach, Fla.)
Sujets:Journal Article Research Support, Non-U.S. Gov't Phosphorus 27YLU75U4W Silicon Dioxide 7631-86-9 Graphite 7782-42-5 Nitrogen N762921K75 plus... Oxygen S88TT14065
Description
Résumé:Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Phosphorus-doped double-layered graphene field-effect transistors (PDGFETs) show much stronger air-stable n-type behavior than nitrogen-doped double-layered graphene FETs (NDGFETs), even under an oxygen atmosphere, due to strong nucleophilicity, which may lead to real applications for air-stable n-type graphene channels
Description:Date Completed 26.02.2013
Date Revised 30.09.2020
published: Print-Electronic
Citation Status MEDLINE
ISSN:1521-4095
DOI:10.1002/adma.201202255