Spectroscopic characterization of charged defects in polycrystalline pentacene by time- and wavelength-resolved electric force microscopy
Spatial maps of topography and trapped charge are acquired for polycrystalline pentacene thin-film transistors using electric and atomic force microscopy. In regions of trapped charge, the rate of trap clearing is studied as a function of the wavelength of incident radiation
Détails bibliographiques
| Publié dans: | Advanced materials (Deerfield Beach, Fla.). - 1998. - 23(2011), 5 vom: 01. Feb., Seite 624-8
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| Auteur principal: |
Luria, Justin L
(Auteur) |
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| Autres auteurs: |
Schwarz, Kathleen A,
Jaquith, Michael J,
Hennig, Richard G,
Marohn, John A |
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| Format: | Article en ligne
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| Langue: | English |
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| Publié: |
2011
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| Accès à la collection: | Advanced materials (Deerfield Beach, Fla.)
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| Sujets: | Journal Article
Research Support, Non-U.S. Gov't
Research Support, U.S. Gov't, Non-P.H.S.
Naphthacenes
pentacene
9FQU5HA0UY |
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