High-Q AlN/SiO2 symmetric composite thin film bulk acoustic wave resonators

High-Q, bulk acoustic wave composite resonators based on a symmetric layer sequence of SiO(2)-AlN-SiO(2) sandwiched between electrodes have been developed. Acoustic isolation was achieved by means of deep silicon etching to obtain membrane type thin film bulk acoustic wave resonators (TFBARs). Three...

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Publié dans:	IEEE transactions on ultrasonics, ferroelectrics, and frequency control. - 1986. - 55(2008), 11 vom: 13. Nov., Seite 2463-8
Auteur principal:	Artieda, Alvaro (Auteur)
Autres auteurs:	Muralt, Paul
Format:	Article en ligne
Langue:	English
Publié:	2008
Accès à la collection:	IEEE transactions on ultrasonics, ferroelectrics, and frequency control
Sujets:	Journal Article Research Support, Non-U.S. Gov't Membranes, Artificial Silicon Dioxide 7631-86-9