High-Q AlN/SiO2 symmetric composite thin film bulk acoustic wave resonators
High-Q, bulk acoustic wave composite resonators based on a symmetric layer sequence of SiO(2)-AlN-SiO(2) sandwiched between electrodes have been developed. Acoustic isolation was achieved by means of deep silicon etching to obtain membrane type thin film bulk acoustic wave resonators (TFBARs). Three...
Ausführliche Beschreibung
Bibliographische Detailangaben
| Veröffentlicht in: | IEEE transactions on ultrasonics, ferroelectrics, and frequency control. - 1986. - 55(2008), 11 vom: 13. Nov., Seite 2463-8
|
|---|
| 1. Verfasser: |
Artieda, Alvaro
(VerfasserIn) |
|---|
| Weitere Verfasser: |
Muralt, Paul |
|---|
| Format: | Online-Aufsatz
|
|---|
| Sprache: | English |
|---|
| Veröffentlicht: |
2008
|
|---|
| Zugriff auf das übergeordnete Werk: | IEEE transactions on ultrasonics, ferroelectrics, and frequency control
|
|---|
| Schlagworte: | Journal Article
Research Support, Non-U.S. Gov't
Membranes, Artificial
Silicon Dioxide
7631-86-9 |
|---|