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231223s2008 xx |||||o 00| ||eng c |
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|a 10.1109/TUFFC.2008.740
|2 doi
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|a eng
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1 |
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|a Artemev, A
|e verfasserin
|4 aut
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|a Phase field modeling of domain structures in ferroelectric thin films
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|c 2008
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
|b c
|2 rdamedia
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|a ƒa Online-Ressource
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|2 rdacarrier
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|a Date Completed 08.07.2008
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|a Date Revised 19.11.2015
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|a published: Print
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|a Citation Status MEDLINE
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|a Phase-field simulations were used to explore the effect of the characteristics of the Landau-Devonshire free energy and values of electrostatic and elastic interactions on the formation of different types of domain structures in ferroelectric thin films. Simulations were performed at different constant-applied electric fields and by using a cyclic continuously changing field. It is shown that the 180 degrees or 90 degrees domain structures can be produced depending on the relative strength of elastic interactions and the ratio of barrier heights that determine the energy of the 180 degrees and 90 degrees domain boundaries. It is shown that the applied field strength and the thickness of the dead layer can play a minor role in the transition between the 90 degrees and 180 degrees domain structures. It is also demonstrated that the poling history can affect the type of the domain structure
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|a Journal Article
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|a Research Support, Non-U.S. Gov't
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|a Research Support, U.S. Gov't, Non-P.H.S.
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| 650 |
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|a Membranes, Artificial
|2 NLM
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| 700 |
1 |
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|a Slutsker, J
|e verfasserin
|4 aut
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1 |
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|a Roytburd, A L
|e verfasserin
|4 aut
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| 773 |
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|i Enthalten in
|t IEEE transactions on ultrasonics, ferroelectrics, and frequency control
|d 1986
|g 55(2008), 5 vom: 01. Mai, Seite 963-70
|w (DE-627)NLM098181017
|x 1525-8955
|7 nnns
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|g volume:55
|g year:2008
|g number:5
|g day:01
|g month:05
|g pages:963-70
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|u http://dx.doi.org/10.1109/TUFFC.2008.740
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