Photoacoustic investigations of shallow acceptors in silicon by a piezoelectric transducer
Photoacoustic (PA) measurements of p-Si single crystals near an optical absorption edge were carried out by using PZT as a detector. A pronounced peak at 1.07 eV appears in addition to the plateau above 1.2 eV. A hole carrier concentration dependence and a compensation effect by thermally generated...
| Publié dans: | IEEE transactions on ultrasonics, ferroelectrics, and frequency control. - 1986. - 40(1993), 2 vom: 15., Seite 110-3 |
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| Auteur principal: | |
| Autres auteurs: | , , |
| Format: | Article |
| Langue: | English |
| Publié: |
1993
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| Accès à la collection: | IEEE transactions on ultrasonics, ferroelectrics, and frequency control |
| Sujets: | Journal Article |